Simulation of Spin-Polarized Transport in Submicrometer Device Structures, S. Saikin, M. Shen, M.-C. Cheng & V. Privman, Proc. IEEE-NANO 2003
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چکیده
The Monte Carlo approach is utilized to study spinpolarized electron transport in spintronic device structures. Evolution of the electron spin polarization vector is controlled by the spin-orbit interaction. Spin polarization properties, including the spin-dephasing length and orientation of the polarization vector, are investigated, for the applied voltage from 0.05V to 0.25V, and for temperatures ranging from 77K to 300K.
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تاریخ انتشار 2003